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| Agilent AMMC-5618 6 - 20 GHz Amplifier Data Sheet Chip Size: 920 x 920 m (36.2 x 36.2 mils) 100 10m (4 0.4 mils) 80 x 80 m (3.1 x 3.1 mils or larger) Chip Size Tolerance: 10m ( 0.4 mils) Chip Thickness: Pad Dimensions: Description Agilent's AMMC- 5618 6-20 GHz MMIC is an efficient two- stage amplifier designed to be used as a cascadable intermediate gain block for EW applications. In communication systems, it can be used as a LO buffer, or as a transmit driver amplifier. It is fabricated using a PHEMT integrated circuit structure that provides exceptional efficiency and flat gain performance. During typical operation with a single 5- V supply, each gain stage is biased for Class- A operation for optimal power output with minimal distortion. The RF input and output have matching circuitry for use in 50- environments. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduces assembly related performance variations and costs. The MMIC is a cost effective alternative to hybrid (discrete FET) amplifiers that require complex tuning and assembly processes. Features * Frequency Range: 6 - 20 GHz * High Gain: 14.5 dB Typical * Output Power: 19.5 dBm Typical * Input and Output Return Loss: < -12 dB * Flat Gain Response: 0.3 dB Typical * Single Supply Bias: 5 V @ 107 mA AMMC-5618 Absolute Maximum Ratings [1] Symbol VD1,VD2 VG1 VG2 ID1 ID2 Pin Tch Tb Tstg Tmax Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. Applications * Driver/Buffer in microwave communication systems * Cascadable gain stage for EW systems * Phased array radar and transmit amplifiers Parameters/Conditions Drain Supply Voltage Optional Gate Voltage Optional Gate Voltage Drain Supply Current Drain Supply Current RF Input Power Channel Temp. Operating Backside Temp. Storage Temp. Units V V V mA mA dBm C C C Min. -5 -5 Max. 7 +1 +1 70 84 20 +150 -55 -65 +165 +300 Maximum Assembly Temp. (60 sec max) C Note: These devices are ESD sensitive. The following precautions are strongly recommended: Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices. AMMC-5618 DC Specifications / Physical Properties [1] Symbol VD1,VD2 ID1 ID2 ID1 + ID2 ch-b Notes: 1. Backside temperature Tb = 25C unless otherwise noted 2. Channel-to-backside Thermal Resistance (ch-b) = 32C/W at Tchannel (Tc) = 150C as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25C calculated from measured data. Parameters and Test Conditions Recommended Drain Supply Voltage First stage Drain Supply Current (V D1= 5V, VG1 = Open or Ground) Second stage Drain Supply Current (V D2= 5V, VG2 = Open or Ground) Total Drain Supply Current (VG1 = VG2 = Open or Ground, VD1= VD2 = 5 V) Thermal Resistance [2] (Backside temperature (Tb) = 25C Unit V mA mA mA C/W Min. 3 Typical 5 48 59 107 22 Max. 7 140 AMMC-5618 RF Specifications [3] (Tb = 25C, VDD= 5 V, IDD = 107 mA, Z0 = 50 .) Symbol |S21|2 |S21|2 RLin RLout |S12|2 P-1dB Psat OIP3 S21 / T NF Notes: 3. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted. 4. Temperature Coefficient of Gain based on sample test Parameters and Test Conditions Small-signal Gain Small-signal Gain Flatness Input Return Loss Output Return Loss Isolation Output Power at 1dB Gain Compression @ 20 GHz Saturated Output Power (3dB Gain Compression) @ 20 GHz Output 3rd Order Intercept Point @ 20 GHz Temperature Coefficient of Gain [2] Noise Figure @ 20 GHz Unit dB dB dB dB dB dBm dBm dBm dB/C dB Min. 12.5 Typical 14.5 0.3 Max. 9 9 -40 17.5 19 12 12 -45 19.5 20.5 26 -0.023 4.4 6.5 2 AMMC-5618 Typical Performance (Tchuck=25C, VDD=5V, IDD = 107 mA, Zo=50) 18 15 12 GAIN (dB) 9 6 3 0 4 7 10 13 16 19 22 FREQUENCY (GHz) ISOLATION (dB) 0 -10 -5 -20 INPUT RL (dB) 4 7 10 13 16 19 22 -30 -40 -50 -20 -60 -70 -25 4 7 10 13 16 19 22 FREQUENCY (GHz) FREQUENCY (GHz) -10 0 -15 Figure 1. Gain 0 -5 OUTPUT RL (dB) -10 -15 -20 -25 -30 4 7 10 13 16 19 22 FREQUENCY (GHz) Figure 2. Isolation 10 Figure 3. Input Return Loss 24 20 16 12 8 8 P1dB (dBm) 4 7 10 13 16 19 22 NF (dB) 6 4 2 4 0 4 7 10 13 16 19 22 FREQUENCY (GHz) FREQUENCY (GHz) 0 Figure 4. Output Return Loss Figure 5. Noise Figure Figure 6. Output Power at 1 dB Gain Compression AMMC-5618 Typical Performance vs. Supply Voltage (Tb=25C, Zo=50) 18 15 12 GAIN (dB) 9 6 3 0 4 7 10 13 16 19 22 FREQUENCY (GHz) Vdd=4V Vdd=5V Vdd=6V 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 4 7 10 13 16 19 22 FREQUENCY (GHz) Vdd=4V Vdd=5V Vdd=6V 0 -5 INPUT RL (dB) -10 -15 -20 -25 -30 4 7 10 13 16 19 22 FREQUENCY (GHz) Vdd=4V Vdd=5V Vdd=6V Figure 7. Gain and Voltage Figure 8. Isolation and Voltage Figure 9. Input Return Loss and Voltage 3 AMMC-5618 Typical Performance vs. Supply Voltage (cont.) (Tb=25C, Zo=50) 0 -5 OUTPUT RL (dB) -10 P1dB (dBm) -15 -20 -25 Vdd=4V Vdd=5V Vdd=6V 25 20 15 10 Vdd=4V Vdd=5V Vdd=6V 5 -30 -35 0 4 7 10 13 16 19 22 4 7 10 13 16 19 22 FREQUENCY (GHz) FREQUENCY (GHz) Figure 10. Output Return Loss and Voltage Figure 11. Output Power and Voltage AMMC-5618 Typical Performance vs. Temperature (VDD=5V, Zo=50) 25 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 4 7 10 13 16 19 22 4 7 10 13 16 19 22 FREQUENCY (GHz) FREQUENCY (GHz) -30 -40 C 25 C 85 C 0 20 P1dB (dBm) 15 10 Vdd=4V Vdd=5V Vdd=6V INPUT RL (dB) -10 -20 -40 C 25 C 85 C 5 0 4 7 10 13 16 19 22 FREQUENCY (GHz) Figure 12. Gain and Temperature 0 -40 C 25 C 85 C Figure 13. Isolation and Temperature 8 7 Figure 14. Input Return Loss and Temperature 25 -5 OUTPUT RL (dB) 20 NOISE FIGURE (dB) 6 5 4 3 2 -40 C 25 C 85 C -10 P1dB (dBm) 15 -15 10 -40 C 25 C 85 C -20 1 -25 4 7 10 13 16 19 22 FREQUENCY (GHz) 0 4 7 10 13 16 5 0 19 22 4 7 10 13 16 19 22 FREQUENCY (GHz) FREQUENCY (GHz) Figure 15. Output Return Loss and Temperature Figure 16. Noise Figure and Temperature Figure 17. Output Power and Temperature 4 AMMC-5618 Typical Scattering Parameters[1] (Tb=25C, VDD= 5 V, IDD = 107 mA) Freq GHz 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 17.00 17.50 18.00 18.50 19.00 19.50 20.00 20.50 21.00 21.50 22.00 Note: 1. Data obtained from on-wafer measurements 5 S11 dB -2.4 -2.9 -3.2 -3.6 -4.0 -4.9 -7.3 -12.7 -19.8 -23.6 -24.7 -26.4 -28.2 -26.3 -22.8 -19.9 -17.7 -16.1 -14.8 -13.9 -13.2 -12.6 -12.2 -11.9 -11.6 -11.5 -11.4 -11.4 -11.5 -11.7 -11.9 -12.2 -12.4 -12.4 -12.2 -11.5 -10.5 -9.2 -7.9 -6.7 -5.7 Mag 0.76 0.72 0.69 0.66 0.63 0.57 0.43 0.23 0.1 0.07 0.06 0.05 0.04 0.05 0.07 0.1 0.13 0.16 0.18 0.2 0.22 0.23 0.25 0.26 0.26 0.27 0.27 0.27 0.27 0.26 0.25 0.25 0.24 0.24 0.25 0.27 0.3 0.35 0.4 0.46 0.52 Phase -125 -147 -166 174 152 126 94 67 66 85 87 68 28 -23 -55 -74 -88 -100 -110 -120 -128 -136 -143 -151 -159 -166 -174 177 168 157 146 132 116 98 77 56 34 14 -5 -21 -36 dB -52.0 -35.4 -19.0 -7.4 0.8 7.7 12.5 14.7 15.1 15.1 15.0 15.0 14.9 14.9 14.9 14.8 14.8 14.7 14.7 14.7 14.6 14.6 14.6 14.6 14.7 14.7 14.7 14.8 14.9 14.9 15.0 15.1 15.1 15.2 15.2 15.2 15.0 14.8 14.5 14.1 13.5 S21 Mag 0 0.02 0.11 0.43 1.09 2.43 4.2 5.41 5.69 5.69 5.64 5.61 5.59 5.57 5.55 5.52 5.49 5.45 5.43 5.41 5.38 5.37 5.37 5.38 5.4 5.42 5.46 5.49 5.54 5.58 5.63 5.66 5.71 5.75 5.75 5.73 5.65 5.51 5.31 5.05 4.72 Phase 74 -119 -102 -120 -147 178 138 94 60 34 13 -5 -22 -37 -51 -65 -77 -90 -101 -113 -124 -134 -145 -155 -166 -176 174 163 153 142 131 120 109 97 85 73 60 46 33 19 5 dB -80.0 -74.0 -69.1 -59.1 -57.7 -51.8 -48.8 -45.7 -44.5 -44.6 -44.3 -44.0 -43.9 -43.6 -43.3 -43.2 -43.1 -42.9 -42.8 -42.5 -42.5 -42.3 -42.1 -41.9 -41.7 -41.6 -41.4 -41.3 -41.1 -40.8 -40.8 -40.8 -40.5 -40.4 -40.3 -40.1 -39.9 -39.9 -40.0 -39.8 -40.3 S12 Mag 0 0 0 0 0 0 0 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Phase -134 -57 -65 -60 -104 -113 -142 -170 161 142 127 115 103 95 86 77 70 63 57 52 45 40 34 31 24 19 15 9 3 0 -7 -12 -16 -23 -29 -35 -42 -48 -55 -63 -72 dB -0.4 -0.9 -1.6 -2.6 -3.8 -5.3 -6.9 -8.6 -10.1 -11.3 -12.6 -13.9 -15.3 -16.7 -18.2 -19.7 -21.4 -22.8 -24.3 -25.1 -25.1 -24.5 -23.3 -22.2 -21.3 -20.7 -19.8 -19.1 -18.4 -17.7 -17.2 -16.7 -16.2 -15.8 -15.4 -14.9 -14.6 -14.0 -13.8 -13.5 -13.1 S22 Mag 0.95 0.91 0.84 0.75 0.64 0.55 0.45 0.37 0.31 0.27 0.23 0.2 0.17 0.15 0.12 0.1 0.09 0.07 0.06 0.06 0.06 0.06 0.07 0.08 0.09 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0.16 0.17 0.18 0.19 0.2 0.2 0.21 0.22 Phase -77 -97 -118 -138 -156 -173 172 160 151 141 130 120 109 98 87 74 60 43 23 1 -22 -44 -60 -73 -85 -95 -105 -113 -121 -126 -132 -138 -143 -148 -154 -158 -163 -166 -172 -176 179 Biasing and Operation The AMMC- 5618 is normally biased with a single positive drain supply connected to both VD1 and VD2 bond pads as shown in Figure 19(a). The recommended supply voltage is 3 to 5 V. No ground wires are required because all ground connections are made with plated throughholes to the backside of the device. Gate bias pads (VG1 & VG2) are also provided to allow adjustments in gain, RF output power, and DC power dissipation, if necessary. No connection to the gate pad is needed for single drain- bias operation. However, for custom applications, the DC current flowing through the input and/ or output gain stage may be adjusted by applying a voltage to the gate bias pad(s) as shown in Figure 19(b). A negative gatepad voltage will decrease the drain current. The gate- pad voltage is approximately zero volt during operation with no DC gate supply. Refer to the Absolute Maximum Ratings table for allowed DC and thermal conditions. Assembly Techniques The backside of the AMMC- 5618 chip is RF ground. For microstripline applications, the chip should be attached directly to the ground plane (e.g., circuit carrier or heatsink) using electrically conductive epoxy[1]. For best performance, the topside of the MMIC should be brought up to the same height as the circuit surrounding it. This can be accomplished by mounting a gold plated metal shim (same length and width as the MMIC) under the chip, which is of the correct thickness to make the chip and adjacent circuit coplanar. The amount of epoxy used for chip and or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. The ground plane should be free of any residue that may jeopardize electrical or mechanical attachment. The location of the RF bond pads is shown in Figure 20. Note that all the RF input and output ports are in a GroundSignal- Ground configuration. RF connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. A single bond wire is sufficient for signal connections, however doublebonding with 0.7 mil gold wire or the use of gold mesh[2] is recommended for best performance, especially near the high end of the frequency range. Thermosonic wedge bonding is the preferred method for wire attachment to the bond pads. Gold mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams with an ultrasonic power of roughly 55 dB for a duration of 76 8 mS. A guided wedge at an ultrasonic power level of 64 dB can be used for the 0.7 mil wire. The recommended wire bond stage temperature is 150 2 C. Caution should be taken to not exceed the Absolute Maximum Rating for assembly temperature and time. The chip is 100 m thick and should be handled with care. This MMIC has exposed air bridges on the top surface and should be handled by the edges or with a custom collet (do not pick up die with vacuum on die center.) This MMIC is also static sensitive and ESD handling precautions should be taken. Notes: 1. Ablebond 84-1 LM1 silver epoxy is recommended. 2. Buckbee-Mears Corporation, St. Paul, MN, 800-262-3824 6 VD1 VD2 Feedback Network Matching Matching Matching RF Output RF Input VG1 Figure 18. AMMC-5618 Schematic VG2 To power supply 100 pF chip capacitor To power supply 100 pF chip capacitor gold plated shim gold plated shim RF Input RF Output RF Input RF Output Bonding island or small chip-capacitor To VG1 power supply (a) (b) To VG2 power supply Figure 19. AMMC-5618 Assembly Diagram 7 0 920 143 Vd1 355 573 GND Vd2 530 RF 530 RF 0 Vg1 Vg2 0 0 79 593 920 Figure 20. AMMC-5618 Bond pad locations (dimensions in microns) Ordering Information: AMMC-5618-W10 = waffle pack, 10 devices per tray AMMC-5618-W50 = waffle pack, 50 devices per tray www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. Data subject to change. Copyright 2003 Agilent Technologies, Inc. February 12, 2004 5989-0532EN |
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